BSM300GA170DN2 |
RFQ for BSM300GA170DN2 |
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| Product | Manufacturers | Pack | D/C |
| BSM300GA170DN2 | - | MODULE | N/A |
Features |
| • Single switch• Including fast free-wheeling diodes• Package with insulated metal base plate• RG on,min = 5.6 Ohm |
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage | VCE |
1700 |
V |
| Collector-gate voltage RGE = 20k | VCGR |
1700 | |
| Gate-emitter voltage | VGE |
± 20 | |
| DC collector current TC = 25 TC = 80 |
IC |
440 300 |
A |
| Pulsed collector current, tp = 1 ms TC = 25 TC = 80 |
ICpuls |
880 600 | |
| Power dissipation per IGBT TC = 25 | Ptot |
2500 |
W |
| Chip temperature | Tj |
+ 150 |
|
| Storage temperature | Tstg |
-55 ... + 150 | |
| Thermal resistance, chip case | RthJC |
0.05 |
K/W |
| Diode thermal resistance, chip case | RthJCD |
0.17 | |
| Insulation test voltage, t = 1min. | Vis |
4000 |
Vac |
| Creepage distance | - |
20 |
mm |
| Clearance | - |
11 | |
| DIN humidity category, DIN 40 040 | - |
F |
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